Estimation of fixed charge densities in hafnium-silicate gate dielectrics

In this paper, an effective technique and methodology for the estimation of fixed charge components in high-k stacks was demonstrated by varying both the SiO 2 and high-k dielectric thicknesses. The SiO 2 thickness was scaled on a single wafer by uniformly changing the etch time of a thermally grown...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2006-10, Vol.53 (10), p.2627-2633
Main Authors: Kaushik, V.S., O'Sullivan, B.J., Pourtois, G., Van Hoornick, N., Delabie, A., Van Elshocht, S., Deweerd, W., Schram, T., Pantisano, L., Rohr, E., Ragnarsson, L.-A., De Gendt, S., Heyns, M.
Format: Article
Language:English
Subjects:
Annealing
Applied sciences
Charge
Charge density
Dielectrics
Electronics
Etching
Exact sciences and technology
Flatband voltage
Hafnium compounds
hafnium silicate
high
interface layer
Materials
oxide charge
Reproducibility
Silicon compounds
Silicon dioxide
slant-etch
Stacks
thickness variation
Wafers
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Summary:In this paper, an effective technique and methodology for the estimation of fixed charge components in high-k stacks was demonstrated by varying both the SiO 2 and high-k dielectric thicknesses. The SiO 2 thickness was scaled on a single wafer by uniformly changing the etch time of a thermally grown SiO 2 layer across the wafer. This minimized wafer-to-wafer variations and enables acquisition of statistically significant datasets. Layers with different thickness of both the nitrided and non-nitrided hafnium-silicate layers were then grown on these wafers to estimate all the interfacial and bulk charge components. The reproducibility and validity of this technique were demonstrated, and this method was used to compare the fixed charge levels in Hf-silicates (HfSiO) and nitrided-Hf-silicate (HfSiON) layers
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2006.882412