A 60nm NOR Flash Memory Cell Technology Utilizing Back Bias Assisted Band-to-Band Tunneling Induced Hot-Electron Injection (B4-Flash)

A p-channel SONOS flash memory cell technology, which provides excellent scalability and high programming efficiency for NOR architecture, has been developed. The cells named B4-Flash utilizing novel back bias assisted band-to-band tunneling induced hot-electron (B4-HE) injection is proposed. By app...

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Bibliographic Details
Main Authors: Shukuri, S., Ajika, N., Mihara, M., Kobayashi, K., Endoh, T., Nakashima, M.
Format: Conference Proceeding
Language:English
Subjects:
Breakdown voltage
Channel hot electron injection
Flash memory cells
Helium
Low voltage
Scalability
Secondary generated hot electron injection
SONOS devices
Throughput
Tunneling
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Summary:A p-channel SONOS flash memory cell technology, which provides excellent scalability and high programming efficiency for NOR architecture, has been developed. The cells named B4-Flash utilizing novel back bias assisted band-to-band tunneling induced hot-electron (B4-HE) injection is proposed. By applying a moderate back bias to the cell during programming, the bit-line voltage can be reduced below the supply voltage, 1.8V. Resulting that the B4-Flash, applicable to NOR architecture, achieves the gate length of 60nm, for the first time. Basic operation of the 50nm B4-Flash cell is also confirmed. Proposed B4-HE injection scheme realizes not only extreme scalability but also high programming efficiency for NOR type cell
ISSN:0743-1562
DOI:10.1109/VLSIT.2006.1705194