On-membrane Micromechanical Pseudomorphic HFET Microwave Char

This article deals with characterization of on-membrane pseudomorphic HFET fabricated by micromechanical technology. The basic transistor parameters important for design of more complex circuits were calculated from S-parameters, measured in the frequency range 100 MHz up to 20 GHz. The small signal...

Full description

Saved in:
Bibliographic Details
Main Authors: Tomaska, M., Klasovity, M., Masar, M.
Format: Conference Proceeding
Language:English
Subjects:
Frequency estimation
Frequency measurement
Gallium arsenide
HEMTs
Micromechanical devices
Microwave technology
Microwave transistors
MODFETs
Scattering parameters
Signal processing
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This article deals with characterization of on-membrane pseudomorphic HFET fabricated by micromechanical technology. The basic transistor parameters important for design of more complex circuits were calculated from S-parameters, measured in the frequency range 100 MHz up to 20 GHz. The small signal equivalent circuit was identified using genetic optimization algorithms as well. This permits a closer insight on parasitic elements affecting the device performance
DOI:10.1109/MIXDES.2006.1706631