A Study of Low Energy Phosphorus Implantation and Annealing in Si:C Epitaxial Films

We investigated the effect of dopant implantation and thermal annealing on substitution carbon concentration of Si:C epitaxial film. While spike annealing at T=1050 degC results in slight loss of substitution carbon (0.6%) but maintains high crystalline, phosphorus implantation induces significant l...

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Bibliographic Details
Main Authors: Zhiyuan Ye, Yihwan Kim, Zojaji, A., Sanchez, E., Yonah Cho, Castle, M., Foad, M.A.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Compressive stress
Lattices
MOS devices
Semiconductor films
Semiconductor materials
Silicon
Temperature
Tensile stress
X-ray scattering
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Summary:We investigated the effect of dopant implantation and thermal annealing on substitution carbon concentration of Si:C epitaxial film. While spike annealing at T=1050 degC results in slight loss of substitution carbon (0.6%) but maintains high crystalline, phosphorus implantation induces significant loss of substitution carbon and a change of carbon depth profile. It is also observed that very abrupt junction can be formed in a Si:C epitaxial film
DOI:10.1109/ISTDM.2006.246499