Influence of Collector Design on the SiGe HBT's Quasi-Saturation Characteristics

In this paper we examine the SiGe HBT's current-voltage characteristics where J c is several times the Kirk current density J HC = qN epi v sat . We analyze the QS characteristics by comparing the NPN's with different intrinsic collector doping profiles fabricated on the same wafer. Data f...

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Bibliographic Details
Main Authors: Cai, W., Jie Zheng, Preisler, E., Hurwitz, P., Racanelli, M.
Format: Conference Proceeding
Language:English
Subjects:
Current density
Current-voltage characteristics
Doping profiles
Germanium silicon alloys
Heterojunction bipolar transistors
Implants
Kirk field collapse effect
Power amplifiers
Power generation
Silicon germanium
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Summary:In this paper we examine the SiGe HBT's current-voltage characteristics where J c is several times the Kirk current density J HC = qN epi v sat . We analyze the QS characteristics by comparing the NPN's with different intrinsic collector doping profiles fabricated on the same wafer. Data from NPN's made from various thicknesses and concentrations of the epi-layer are also presented
DOI:10.1109/ISTDM.2006.246507