Electronic Properties of Silicon Nanowires: Confined Phonons and Surface Roughness

Electron mobility in narrow, rectangular silicon nanowires is calculated using a Schrödinger-Monte-Carlo-Poisson transport simulator. Mobility lowering due to the carrier scattering with confined phonons in narrow wires and the influence of surface roughness within Ando's model are investigated...

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Bibliographic Details
Main Authors: Ramayya, E.B., Knezevic, I., Vasileska, D., Goodnick, S.M.
Format: Conference Proceeding
Language:English
Subjects:
Acoustic scattering
confined phonons
Electron mobility
Light scattering
Nanowires
Optical scattering
Particle scattering
Phonons
Rough surfaces
Silicon
silicon nanowire
Surface roughness
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Summary:Electron mobility in narrow, rectangular silicon nanowires is calculated using a Schrödinger-Monte-Carlo-Poisson transport simulator. Mobility lowering due to the carrier scattering with confined phonons in narrow wires and the influence of surface roughness within Ando's model are investigated.
ISSN:1944-9399
1944-9380
DOI:10.1109/NANO.2006.247556