Inner Trench Type Tungsten Nano Dot Arrays Patterned by Using Diblock Copolymer Templates and Selective Ion Etching

Dense and periodic arrays of holes and nano dot were fabricated in silicon oxide and silicon. The holes were approximately 25 nanometers(nm) wide, 35 nm deep and 60nm apart. To access this length scale, self-assembling resists were used to produce a layer of hexagonally ordered parallel cylinders of...

Full description

Saved in:
Bibliographic Details
Main Authors: Gil bum Kang, Seong-Il Kim, Young Hwan Kim, Min Chul Park, Yong Tae Kim, Chang Woo Lee
Format: Conference Proceeding
Language:English
Subjects:
Chemicals
copolymer lithography
diblock copolymer
Etching
Fabrication
Gold
Lithography
nano dot
nanotemplate
reactive ion etching
Resists
Self-assembly
Silicon
Tungsten
US Department of Transportation
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Dense and periodic arrays of holes and nano dot were fabricated in silicon oxide and silicon. The holes were approximately 25 nanometers(nm) wide, 35 nm deep and 60nm apart. To access this length scale, self-assembling resists were used to produce a layer of hexagonally ordered parallel cylinders of polymethylmethacrylate(PMMA) in polystyrene(PS) matrix. The PMMA cylinders were deraded and removed with acetic acid rinse to produce a PS mask for pattern transfer. The silicon oxide was removed by fluorine-based reactive ion etching(RIE). Selective tungsten deposition was accomplished in nanoscale trench by using a low pressure chemical vapor deposition(LPCVD) method. Tungsten nano dot and trenched silicon size were 26nm and 30nm respectively.
ISSN:1944-9399
1944-9380
DOI:10.1109/NANO.2006.247724