Alternating-Current White Thin-Film Light-Emitting Diodes Based on Hydrogenated Amorphous Carbon Layer

Alternating-current white thin-film light-emitting diodes (ACW-TFLEDs) have been fabricated and demonstrated with composition-graded hydrogenated intrinsic amorphous silicon carbide (i-a-SiC : H) layers. It was found that H 2 -plasma treatment of luminescent i-a-C : H layer played an important role...

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Bibliographic Details
Published in:IEEE photonics technology letters 2006-11, Vol.18 (22), p.2341-2343
Main Authors: Yeh, Rong-Hwei, Yu, Tai-Rong, Lo, Shih-Yung, Hong, Jyh-Wong
Format: Article
Language:English
Subjects:
Alternating-current
Amorphous materials
Bias
Brightness
Density
Diamond-like carbon
Direct current
Electroluminescence
hydrogenated amorphous carbon
Injection current
Light emitting diodes
Polymer films
Semiconductor films
Spectra
Substrates
Thin films
Threshold voltage
Transistors
Voltage
white light
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Summary:Alternating-current white thin-film light-emitting diodes (ACW-TFLEDs) have been fabricated and demonstrated with composition-graded hydrogenated intrinsic amorphous silicon carbide (i-a-SiC : H) layers. It was found that H 2 -plasma treatment of luminescent i-a-C : H layer played an important role in decreasing the ACW-TFLED electroluminescence (EL) threshold voltage, increasing the brightness, and broadening the EL spectrum. The EL spectra of the ACW-TFLED under either dc forward or reverse bias, or the sinusoidal alternating-current voltage were qualitatively very similar, with a peak wavelength at about 505 nm and a broad full-width at half maximum (FWHM) about 240 nm. This device revealed a brightness about 800(500)cd/m 2 under dc forward (reverse) bias at an injection current density of 600 mA/cm 2
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2006.885219