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Alternating-Current White Thin-Film Light-Emitting Diodes Based on Hydrogenated Amorphous Carbon Layer

Alternating-current white thin-film light-emitting diodes (ACW-TFLEDs) have been fabricated and demonstrated with composition-graded hydrogenated intrinsic amorphous silicon carbide (i-a-SiC : H) layers. It was found that H 2 -plasma treatment of luminescent i-a-C : H layer played an important role...

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Published in:	IEEE photonics technology letters 2006-11, Vol.18 (22), p.2341-2343
Main Authors:	Yeh, Rong-Hwei, Yu, Tai-Rong, Lo, Shih-Yung, Hong, Jyh-Wong
Format:	Article
Language:	English
Subjects:	Alternating-current Amorphous materials Bias Brightness Density Diamond-like carbon Direct current Electroluminescence hydrogenated amorphous carbon Injection current Light emitting diodes Polymer films Semiconductor films Spectra Substrates Thin films Threshold voltage Transistors Voltage white light
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creator	Yeh, Rong-Hwei Yu, Tai-Rong Lo, Shih-Yung Hong, Jyh-Wong
description	Alternating-current white thin-film light-emitting diodes (ACW-TFLEDs) have been fabricated and demonstrated with composition-graded hydrogenated intrinsic amorphous silicon carbide (i-a-SiC : H) layers. It was found that H 2 -plasma treatment of luminescent i-a-C : H layer played an important role in decreasing the ACW-TFLED electroluminescence (EL) threshold voltage, increasing the brightness, and broadening the EL spectrum. The EL spectra of the ACW-TFLED under either dc forward or reverse bias, or the sinusoidal alternating-current voltage were qualitatively very similar, with a peak wavelength at about 505 nm and a broad full-width at half maximum (FWHM) about 240 nm. This device revealed a brightness about 800(500)cd/m 2 under dc forward (reverse) bias at an injection current density of 600 mA/cm 2
doi_str_mv	10.1109/LPT.2006.885219
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It was found that H 2 -plasma treatment of luminescent i-a-C : H layer played an important role in decreasing the ACW-TFLED electroluminescence (EL) threshold voltage, increasing the brightness, and broadening the EL spectrum. The EL spectra of the ACW-TFLED under either dc forward or reverse bias, or the sinusoidal alternating-current voltage were qualitatively very similar, with a peak wavelength at about 505 nm and a broad full-width at half maximum (FWHM) about 240 nm. 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This device revealed a brightness about 800(500)cd/m 2 under dc forward (reverse) bias at an injection current density of 600 mA/cm 2</description><subject>Alternating-current</subject><subject>Amorphous materials</subject><subject>Bias</subject><subject>Brightness</subject><subject>Density</subject><subject>Diamond-like carbon</subject><subject>Direct current</subject><subject>Electroluminescence</subject><subject>hydrogenated amorphous carbon</subject><subject>Injection current</subject><subject>Light emitting diodes</subject><subject>Polymer films</subject><subject>Semiconductor films</subject><subject>Spectra</subject><subject>Substrates</subject><subject>Thin films</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>Voltage</subject><subject>white light</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNpdkDtPwzAQgCMEEqUwM7BYLExpfXEc22MJLUWKBEMRY5THpXGVR7GTof8eV0FC4pa70313On2edw90AUDVMvnYLQJKo4WUPAB14c1AheBTEOGlq6mrARi_9m6sPVAKIWfhzKtWzYCmywbd7f14NAa7gXzVekCyq3Xnb3TTkkTv68Fft3o4Y-RF9yVa8pxZLEnfke2pNP0e3RHXr9reHOt-tCTOTO6mSXZCc-tdVVlj8e43z73PzXoXb_3k_fUtXiV-wQI6-FEQUlYWBQfFVIhAeVWWOeZK5ULKClxgFfE8UjTIBWSqFEIJFqKUBRNcsbn3NN09mv57RDukrbYFNk3WofsplSoKIBAcHPn4jzz0oxPROCiKGBcskg5aTlBhemsNVunR6DYzpxRoeraeOuvp2Xo6WXcbD9OGRsQ_WoDgjLMfOrl84Q</recordid><startdate>20061115</startdate><enddate>20061115</enddate><creator>Yeh, Rong-Hwei</creator><creator>Yu, Tai-Rong</creator><creator>Lo, Shih-Yung</creator><creator>Hong, Jyh-Wong</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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subjects	Alternating-current Amorphous materials Bias Brightness Density Diamond-like carbon Direct current Electroluminescence hydrogenated amorphous carbon Injection current Light emitting diodes Polymer films Semiconductor films Spectra Substrates Thin films Threshold voltage Transistors Voltage white light
title	Alternating-Current White Thin-Film Light-Emitting Diodes Based on Hydrogenated Amorphous Carbon Layer
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