Design of a Sub-mW 960-MHz UWB CMOS LNA

This paper presents a sub-mW ultra-wideband (UWB) fully differential CMOS low-noise amplifier (LNA) operating below 960 MHz for sensor network applications. By utilizing both nMOS and pMOS transistors to boost the transconductance, coupling the input signals to the back-gates of the transistors, and...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2006-11, Vol.41 (11), p.2449-2456
Main Authors: Wang, S.B.T., Niknejad, A.M., Brodersen, R.W.
Format: Article
Language:English
Subjects:
Amplifier noise
Amplifiers
Applied sciences
broadband impedance matching
Circuit noise
Circuit properties
Circuits
CMOS
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Energy consumption
Exact sciences and technology
Impedance matching
Integrated circuits
Interference
Joining
low-noise amplifier
Low-noise amplifiers
Noise figure
Noise levels
Power consumption
Power gain
Pulse amplifiers
Pulse inverters
Pulse modulation
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Ultra wideband technology
ultra-wideband
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Summary:This paper presents a sub-mW ultra-wideband (UWB) fully differential CMOS low-noise amplifier (LNA) operating below 960 MHz for sensor network applications. By utilizing both nMOS and pMOS transistors to boost the transconductance, coupling the input signals to the back-gates of the transistors, and combining the common-gate and shunt-feedback topologies, the LNA achieves 13 dB of power gain, a 3.6 dB minimum noise figure, and -10 dBm of IIP3 with only 0.72 mW of power consumption from a 1.2 V supply
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2006.883321