An enhanced SPICE MOSFET model suitable for analog applications

A MOSFET model optimized for analog circuit simulation is presented and shown to agree with measured device characteristics, especially device output conductance and transconductance, over a wide range of operation. The widely used SPICE Level 3 (MOS3) model equations were utilized as a starting poi...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on computer-aided design of integrated circuits and systems 1992-11, Vol.11 (11), p.1418-1425
Main Authors: Power, J.A., Lane, W.A.
Format: Article
Language:English
Subjects:
Accuracy
Analog circuits
Applied sciences
Circuit simulation
Convergence
Electric, optical and optoelectronic circuits
Electronics
Equations
Exact sciences and technology
MOSFET circuits
Predictive models
Solid modeling
SPICE
Theoretical study. Circuits analysis and design
Transconductance
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A MOSFET model optimized for analog circuit simulation is presented and shown to agree with measured device characteristics, especially device output conductance and transconductance, over a wide range of operation. The widely used SPICE Level 3 (MOS3) model equations were utilized as a starting point in the model development process. The enhanced model (NMOD) exhibits smooth and continuous transitions in the weak to strong inversion region, and in the region between linear and saturation modes of device operation. These smooth transitions improve both the model's current and conductance prediction accuracy, as well as its convergence properties when used in circuit simulation. This is made possible because a single current equation is utilized for all regions of device operation. The NMOD model accurately characterizes devices over a wide range of geometries, achieving, for example, 1.3% and 4.2% average errors between measured and model I/sub DS/ and gds characteristics, respectively, for a 20/1.3- mu m p-channel device over a 5-V bias range.< >
ISSN:0278-0070
1937-4151
DOI:10.1109/43.177404