Broadband 0.25 micron ion-implant MMIC low noise amplifiers on GaAs

A highly manufacturable 0.25- mu m ion-implant-process has been used for the development of monolithic microwave integrated circuit low-noise amplifiers (MMIC LNAs) covering the 2-18-GHz band. Noise figures of less than 2.5 dB and 3.0 dB have been achieved with MMICs covering the 2-6-GHz and 6-18-GH...

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Bibliographic Details
Main Authors: Sanctuary, J., Woodin, C.E., Manning, J.
Format: Conference Proceeding
Language:English
Subjects:
Broadband amplifiers
Gain
Gallium arsenide
Integrated circuit manufacture
Integrated circuit noise
Low-noise amplifiers
Microwave integrated circuits
MMICs
Monolithic integrated circuits
Noise figure
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Summary:A highly manufacturable 0.25- mu m ion-implant-process has been used for the development of monolithic microwave integrated circuit low-noise amplifiers (MMIC LNAs) covering the 2-18-GHz band. Noise figures of less than 2.5 dB and 3.0 dB have been achieved with MMICs covering the 2-6-GHz and 6-18-GHz bands, respectively. Insertion gains were 16 dB for the 2-6-GHz design and 10 dB for the 6-18-GHz design. This performance is comparable to that reported for high-electron-mobility-transistor (HEMT) processes.< >
DOI:10.1109/MCS.1992.185988