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A new phase noise reduction technique for MMIC oscillators
A novel technique for reducing oscillator phase noise has been demonstrated. The technique utilizes a pair of limiting diodes to keep the metal-semiconductor field-effect transistor operating in a linear region. An X-band monolithic microwave integrated circuit oscillator was designed, fabricated, a...
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Main Authors: | , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | A novel technique for reducing oscillator phase noise has been demonstrated. The technique utilizes a pair of limiting diodes to keep the metal-semiconductor field-effect transistor operating in a linear region. An X-band monolithic microwave integrated circuit oscillator was designed, fabricated, and tested to demonstrate the concept. A reduction of 15 dB in phase noise at 5 kHz from the carrier was measured. The technique is ideal for GaAs monolithic implementation, and can also be applied to silicon bipolar-based oscillators for phase-noise reduction.< > |
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ISSN: | 0149-645X 2576-7216 |
DOI: | 10.1109/MWSYM.1992.188013 |