Partitioned-charge-based BJT model using transient charge control relations for arbitrary doping and bias conditions

Recent transient charge control (TCC) relations such as the TICC or more general GTCC are applied to accurate calculation of base charge partitioning for arbitrary doping profiles and bias conditions. A large-signal BJT circuit model is developed using this approach; both DC and complete first-order...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1993-03, Vol.40 (3), p.605-612
Main Authors: Parker, J.R., Roulston, D.J., Hamel, J.S.
Format: Article
Language:English
Subjects:
Admittance
Applied sciences
Capacitance
Control theory
Councils
Delay effects
Design. Technologies. Operation analysis. Testing
Doping profiles
Electronics
Equations
Equivalent circuits
Exact sciences and technology
Frequency
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
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Description
Summary:Recent transient charge control (TCC) relations such as the TICC or more general GTCC are applied to accurate calculation of base charge partitioning for arbitrary doping profiles and bias conditions. A large-signal BJT circuit model is developed using this approach; both DC and complete first-order AC characteristics are derived from static device simulations.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.199367