Influence of low energy electronic radiation on the latchup triggering level in CMOS integrated circuits

The authors present experimental results showing the latchup sensitization of CMOS integrated circuits when subject to low energy electronic radiation. They emphasize the major role played by the incident electron dose and explain the mechanism through which irradiation can decrease the latchup immu...

Full description

Saved in:
Bibliographic Details
Main Authors: Roche, F.M., Bocus, S.D., Pistoulet, B.
Format: Conference Proceeding
Language:English
Subjects:
Circuit testing
CMOS integrated circuits
Electron beams
MOSFETs
Polarization
Robots
Scanning electron microscopy
Substrates
Surface charging
Voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The authors present experimental results showing the latchup sensitization of CMOS integrated circuits when subject to low energy electronic radiation. They emphasize the major role played by the incident electron dose and explain the mechanism through which irradiation can decrease the latchup immunity of the device. The results have been obtained on a test vehicle achieved in a 2 mu m industrial technology. The observations are discussed with the help of an electrical model.< >
DOI:10.1109/RADECS.1991.213558