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Analysis of ionizing radiation induced damage in charge coupled devices
Ionizing environment effects on CCD test devices are studied. Like MOS technology, CCD technology exhibits active and field oxide threshold voltage shift. Resulting from this shift, transfer efficiency degradation is observed on two phase CCD registers. On the other hand, 4 phase CCD registers worki...
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| container_end_page | 337 |
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| creator | Roy, F. Vandekerckhove, M. Thenoz, Y. Commere, B. Baratier, L. |
| description | Ionizing environment effects on CCD test devices are studied. Like MOS technology, CCD technology exhibits active and field oxide threshold voltage shift. Resulting from this shift, transfer efficiency degradation is observed on two phase CCD registers. On the other hand, 4 phase CCD registers working in specific conditions retain charge storage and transfer efficiency performances for a large total dose range. The dark current increase comes from peripheral insulation contribution. This degradation can result from a combination of mechanical stress induced by the bird's beak and hole accumulation induced by the ionizing radiation in the peripheral insulator. These two effects contribute to increase the interface states density and, by field effect, to extend the area of the active interface states along the bird's beak.< > |
| doi_str_mv | 10.1109/RADECS.1991.213580 |
| format | conference_proceeding |
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Like MOS technology, CCD technology exhibits active and field oxide threshold voltage shift. Resulting from this shift, transfer efficiency degradation is observed on two phase CCD registers. On the other hand, 4 phase CCD registers working in specific conditions retain charge storage and transfer efficiency performances for a large total dose range. The dark current increase comes from peripheral insulation contribution. This degradation can result from a combination of mechanical stress induced by the bird's beak and hole accumulation induced by the ionizing radiation in the peripheral insulator. These two effects contribute to increase the interface states density and, by field effect, to extend the area of the active interface states along the bird's beak.< ></description><identifier>ISBN: 0780302087</identifier><identifier>ISBN: 9780780302082</identifier><identifier>DOI: 10.1109/RADECS.1991.213580</identifier><language>eng</language><publisher>IEEE</publisher><subject>Charge coupled devices ; Charge-coupled image sensors ; Circuits ; Degradation ; Insulation ; Interface states ; Ionizing radiation ; Performance analysis ; Performance evaluation ; Testing</subject><ispartof>RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems, 1991, p.333-337</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/213580$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/213580$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Roy, F.</creatorcontrib><creatorcontrib>Vandekerckhove, M.</creatorcontrib><creatorcontrib>Thenoz, Y.</creatorcontrib><creatorcontrib>Commere, B.</creatorcontrib><creatorcontrib>Baratier, L.</creatorcontrib><title>Analysis of ionizing radiation induced damage in charge coupled devices</title><title>RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems</title><addtitle>RADECS</addtitle><description>Ionizing environment effects on CCD test devices are studied. Like MOS technology, CCD technology exhibits active and field oxide threshold voltage shift. Resulting from this shift, transfer efficiency degradation is observed on two phase CCD registers. On the other hand, 4 phase CCD registers working in specific conditions retain charge storage and transfer efficiency performances for a large total dose range. The dark current increase comes from peripheral insulation contribution. This degradation can result from a combination of mechanical stress induced by the bird's beak and hole accumulation induced by the ionizing radiation in the peripheral insulator. These two effects contribute to increase the interface states density and, by field effect, to extend the area of the active interface states along the bird's beak.< ></description><subject>Charge coupled devices</subject><subject>Charge-coupled image sensors</subject><subject>Circuits</subject><subject>Degradation</subject><subject>Insulation</subject><subject>Interface states</subject><subject>Ionizing radiation</subject><subject>Performance analysis</subject><subject>Performance evaluation</subject><subject>Testing</subject><isbn>0780302087</isbn><isbn>9780780302082</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1991</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNp9jk0OgjAYRJsYE_-4AKteQGwpBrokiLpW96RpC34GimnFBE9vja6dzczL2wxCISURpYRvTvmuLM4R5ZxGMWXbjEzQgqQZYSQmWTpDgXM34pMkMWdsjg65Ee3owOG-xtAbeIFpsBUKxMMjBqMGqRVWohON9ojlVVi_ZD_c24_QT5DardC0Fq3Twa-XKNyXl-K4Bq11dbfQCTtW30vsr3wDUHQ7Tg</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>Roy, F.</creator><creator>Vandekerckhove, M.</creator><creator>Thenoz, Y.</creator><creator>Commere, B.</creator><creator>Baratier, L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1991</creationdate><title>Analysis of ionizing radiation induced damage in charge coupled devices</title><author>Roy, F. ; Vandekerckhove, M. ; Thenoz, Y. ; Commere, B. ; Baratier, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_2135803</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Charge coupled devices</topic><topic>Charge-coupled image sensors</topic><topic>Circuits</topic><topic>Degradation</topic><topic>Insulation</topic><topic>Interface states</topic><topic>Ionizing radiation</topic><topic>Performance analysis</topic><topic>Performance evaluation</topic><topic>Testing</topic><toplevel>online_resources</toplevel><creatorcontrib>Roy, F.</creatorcontrib><creatorcontrib>Vandekerckhove, M.</creatorcontrib><creatorcontrib>Thenoz, Y.</creatorcontrib><creatorcontrib>Commere, B.</creatorcontrib><creatorcontrib>Baratier, L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Roy, F.</au><au>Vandekerckhove, M.</au><au>Thenoz, Y.</au><au>Commere, B.</au><au>Baratier, L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Analysis of ionizing radiation induced damage in charge coupled devices</atitle><btitle>RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems</btitle><stitle>RADECS</stitle><date>1991</date><risdate>1991</risdate><spage>333</spage><epage>337</epage><pages>333-337</pages><isbn>0780302087</isbn><isbn>9780780302082</isbn><abstract>Ionizing environment effects on CCD test devices are studied. Like MOS technology, CCD technology exhibits active and field oxide threshold voltage shift. Resulting from this shift, transfer efficiency degradation is observed on two phase CCD registers. On the other hand, 4 phase CCD registers working in specific conditions retain charge storage and transfer efficiency performances for a large total dose range. The dark current increase comes from peripheral insulation contribution. This degradation can result from a combination of mechanical stress induced by the bird's beak and hole accumulation induced by the ionizing radiation in the peripheral insulator. These two effects contribute to increase the interface states density and, by field effect, to extend the area of the active interface states along the bird's beak.< ></abstract><pub>IEEE</pub><doi>10.1109/RADECS.1991.213580</doi></addata></record> |
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| identifier | ISBN: 0780302087 |
| ispartof | RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems, 1991, p.333-337 |
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| language | eng |
| recordid | cdi_ieee_primary_213580 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Charge coupled devices Charge-coupled image sensors Circuits Degradation Insulation Interface states Ionizing radiation Performance analysis Performance evaluation Testing |
| title | Analysis of ionizing radiation induced damage in charge coupled devices |
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