Degradation of the charge transfer efficiency of a buried channel charge coupled device due to radiation damage by a beta source

The charge transfer efficiency of an EEV UT101 buried channel charge coupled device has been measured after irradiation by a /sup 90/Sr beta source. The dependence on signal density and clock timing has been established. By the calculation of the energy level and capture cross section of the main el...

Full description

Saved in:
Bibliographic Details
Main Authors: Robbins, M.S., Roy, T., Watts, S.J.
Format: Conference Proceeding
Language:English
Subjects:
Charge measurement
Charge transfer
Charge-coupled image sensors
Clocks
Current measurement
Degradation
Electron traps
Energy states
Strontium
Timing
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The charge transfer efficiency of an EEV UT101 buried channel charge coupled device has been measured after irradiation by a /sup 90/Sr beta source. The dependence on signal density and clock timing has been established. By the calculation of the energy level and capture cross section of the main electron trapping centre, and some annealing studies, the main radiation induced trapping complex has been found to be the Si-E centre. Some suggestions for the improvement of the degradation are made.< >
DOI:10.1109/RADECS.1991.213581