Factors affecting the interconnection resistance and yield in multilayer polyimide/copper structures

• Published in: IEEE transactions on components, hybrids, and manufacturing technology hybrids, and manufacturing technology, 1993-02, Vol.16 (1), p.74-88
• Main Authors: Shih, D.-Y., Yeh, H.L., Paraszczak, J., Lewis, J., Graham, W., Nunes, S., Narayan, C., McGouey, R., Galligan, E., Cataldo, J., Serino, R., Perfecto, E., Chang, C.-A., Deutsch, A., Rothman, L., Ritsko, J.J., Wilczynski, J.S.
• Format: Article
• Language: English
• Subjects: Applied sciences; Chromium; Design. Technologies. Operation analysis. Testing; Dielectric substrates; Dielectric thin films; Electronics; Exact sciences and technology; Integrated circuits; Passivation; Plasma applications; Plasma materials processing; Polyimides; Process design; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor thin films; Silicon
• ISSN: 0148-6411; 1558-3082
• DOI: 10.1109/33.214864

The use of a lift-off technique to fabricate a high-density structure consisting of multiple layers of metal/polyimide thin-film structures on a silicon substrate is described. To achieve better performance and high yield, the process design, the processing parameters, the thickness of the Cr/Cu/Cr metallurgy, and the use of suitable polyimide dielectrics, were evaluated. The plasma processing conditions, the types of passivation metals on Cu, and the use of a siloxane-polyimide as the gap-fill/etch-stop material were all shown to play a critical role in affecting the interconnection resistance and yield of the multilayer thin-film structures. By optimizing these parameters the feasibility of fabricating high-density thin-film wiring layers with good yield is demonstrated.< >