Electromigration wafer level reliability test and analysis methodology

As an outcome of the advances in integrated circuit fabrication technology, electromigration has become a major reliability concern in silicon VLSI circuits. This paper presents an innovative testing and analysis approach, that has been implemented, and allows a substantial reduction in the electrom...

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Bibliographic Details
Main Authors: Weis, E.A., Kinsbron, E., Chanoch, G., Snyder, M.M., Vogel, B., Croitoru, N.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum
Circuit testing
Conducting materials
Conductive films
Conductivity
Copper
Electromigration
Electrons
Failure analysis
Silicon
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Summary:As an outcome of the advances in integrated circuit fabrication technology, electromigration has become a major reliability concern in silicon VLSI circuits. This paper presents an innovative testing and analysis approach, that has been implemented, and allows a substantial reduction in the electromigration test times of VLSI metal thin film.< >
DOI:10.1109/EEIS.1991.217713