Characteristics of 680 nm-visible laser diode with MQB grown by MOCVD

The authors introduced MQB (multiquantum barrier) structure grown by metal-organic chemical vapor deposition in an AlGaInP visible laser and improved the laser characteristics. The threshold current at 70 degrees C is reduced from 70 mA to 56 mA, and the characteristic temperature in the range over...

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Bibliographic Details
Main Authors: Motoda, T., Kadoiwa, K., Kimura, T., Nishimura, T., Uesugi, F., Kamizato, T., Arimoto, S., Tsugami, M., Mizuguchi, K.
Format: Conference Proceeding
Language:English
Subjects:
Controllability
Diode lasers
Electrons
Interference
Light scattering
Masers
MOCVD
Optical scattering
Temperature
Threshold current
Online Access:Request full text
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Summary:The authors introduced MQB (multiquantum barrier) structure grown by metal-organic chemical vapor deposition in an AlGaInP visible laser and improved the laser characteristics. The threshold current at 70 degrees C is reduced from 70 mA to 56 mA, and the characteristic temperature in the range over 70 degrees C is improved from 52 K to 69 K. This improvement is due to the suppression of carrier overflow by the MQB structure. This is a kind of electron wave interference device working at room temperature.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1991.235393