A 5 V-only virtual ground flash cell with an auxiliary gate for high density and high speed application

A 5 V-only virtual ground flash EEPROM cell with an auxiliary gate is proposed for high-density and high-speed application. The virtual ground auxiliary gate structure achieves a cell area of 2.59 mu m/sup 2/ with a 0.5- mu m technology and enables a fast programming of less than 1 mu s with a drain...

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Bibliographic Details
Main Authors: Yamauchi, Y., Tanaka, K., Shibayama, H., Miyake, R.
Format: Conference Proceeding
Language:English
Subjects:
Electronic equipment
Electrons
EPROM
Etching
Implants
Laboratories
Nonvolatile memory
Power supplies
Very large scale integration
Voltage
Online Access:Request full text
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Summary:A 5 V-only virtual ground flash EEPROM cell with an auxiliary gate is proposed for high-density and high-speed application. The virtual ground auxiliary gate structure achieves a cell area of 2.59 mu m/sup 2/ with a 0.5- mu m technology and enables a fast programming of less than 1 mu s with a drain voltage of 5 V. It also provides a read-out current higher than 100 mu A and a soft-write lifetime greater than 10 years in read operation. The cell is suitable for high-density flash memories beyond 16 M bits.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1991.235439