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In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs
The authors have demonstrated in-situ X-ray monitoring in MOVPE (metal-organic vapor phase epitaxy). The in-situ X-ray monitoring was achieved even under the growth conditions at high temperature. The temperature dependence of lattice mismatch could be evaluated with sufficient accuracy and high res...
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Main Authors: | , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | The authors have demonstrated in-situ X-ray monitoring in MOVPE (metal-organic vapor phase epitaxy). The in-situ X-ray monitoring was achieved even under the growth conditions at high temperature. The temperature dependence of lattice mismatch could be evaluated with sufficient accuracy and high resolution. In-situ X-ray monitoring was applied to the feedback growth of a strained InGaAs layer. The precise control of lattice mismatch of the InGaAs layer was achieved by the feedback growth.< > |
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DOI: | 10.1109/ICIPRM.1992.235554 |