In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs

The authors have demonstrated in-situ X-ray monitoring in MOVPE (metal-organic vapor phase epitaxy). The in-situ X-ray monitoring was achieved even under the growth conditions at high temperature. The temperature dependence of lattice mismatch could be evaluated with sufficient accuracy and high res...

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Main Authors: Tsuchiya, T., Taniwatari, T., Uomi, K., Kawano, T., Ono, Y.
Format: Conference Proceeding
Language:English
Subjects:
Condition monitoring
Epitaxial growth
Epitaxial layers
Feedback
Fluid flow
Indium gallium arsenide
Indium phosphide
Lattices
Molecular beam epitaxial growth
Temperature
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creator Tsuchiya, T.
Taniwatari, T.
Uomi, K.
Kawano, T.
Ono, Y.
description The authors have demonstrated in-situ X-ray monitoring in MOVPE (metal-organic vapor phase epitaxy). The in-situ X-ray monitoring was achieved even under the growth conditions at high temperature. The temperature dependence of lattice mismatch could be evaluated with sufficient accuracy and high resolution. In-situ X-ray monitoring was applied to the feedback growth of a strained InGaAs layer. The precise control of lattice mismatch of the InGaAs layer was achieved by the feedback growth.< >
doi_str_mv 10.1109/ICIPRM.1992.235554
format conference_proceeding
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identifier ISBN: 0780305221
ispartof LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, 1992, p.646-649
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Condition monitoring
Epitaxial growth
Epitaxial layers
Feedback
Fluid flow
Indium gallium arsenide
Indium phosphide
Lattices
Molecular beam epitaxial growth
Temperature
title In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs
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