On the optimization and reliability of ohmic and Schottky contacts to InAlAs/InGaAs HFET

Performance and reliability issues of contacts to lattice matched HFETs (heterostructure field-effect transistors) grown by MBE (molecular-beam epitaxy) on InP are addressed. Based on the idea that both Ni and Ge should be very close to the semiconductor surface, a novel Au-Ge-Ni superlattice ohmic-...

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Bibliographic Details
Main Authors: Heedt, C., Gottwald, P., Buchali, F., Prost, W., Kunzel, H., Tegude, F.J.
Format: Conference Proceeding
Language:English
Subjects:
HEMTs
Indium phosphide
Lattices
Leakage current
Metallic superlattices
Metallization
MODFETs
Molecular beam epitaxial growth
Schottky barriers
Semiconductor superlattices
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Summary:Performance and reliability issues of contacts to lattice matched HFETs (heterostructure field-effect transistors) grown by MBE (molecular-beam epitaxy) on InP are addressed. Based on the idea that both Ni and Ge should be very close to the semiconductor surface, a novel Au-Ge-Ni superlattice ohmic-contact metallization has been developed (R/sub C/
DOI:10.1109/ICIPRM.1992.235595