GaInAs(P)-InP quantum well structures for optoelectronic devices grown by MOVPE using DADI as a novel liquid In precursor

The novel liquid In precursor DADI (dimethylaminopropyl dimethylindium) has been used to grow multiquantum well structures which show a line splitting, in photoluminescence due to monolayer fluctuations. Moreover, GaInAs-GaInAsP-InP separate confinement multiquantum well modulator structures have be...

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Bibliographic Details
Main Authors: Scholz, F., Rudeloff, R., Henle, B., Harle, V., Scheuble, E., Tutken, T., Hangleiter, A., Pohl, L.
Format: Conference Proceeding
Language:English
Subjects:
Chemicals
Epitaxial growth
Epitaxial layers
Indium phosphide
Optical modulation
Optoelectronic devices
Potential well
Safety
Stability
Temperature
Online Access:Request full text
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Summary:The novel liquid In precursor DADI (dimethylaminopropyl dimethylindium) has been used to grow multiquantum well structures which show a line splitting, in photoluminescence due to monolayer fluctuations. Moreover, GaInAs-GaInAsP-InP separate confinement multiquantum well modulator structures have been grown. By measuring the quantum confined Stark effect in electroabsorption experiments, a good agreement with theory could be obtained. Thus, it was shown that DADI can be used to grow high-quality heterostructures suitable for optoelectronic devices.< >
DOI:10.1109/ICIPRM.1992.235653