Electrical characterization of textured interpoly capacitors for advanced stacked DRAMs

The authors present and discuss the C-V, I-V and TDDB (time-dependent dielectric breakdown) characteristics of textured interpoly capacitors fabricated with different process conditions. It is concluded that the combination of a rough storage electrode with a dielectric that has a bulk-limited condu...

Full description

Saved in:
Bibliographic Details
Main Authors: Fazan, P.C., Ditali, A.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Capacitors
Dielectric breakdown
Dielectric devices
Electrodes
Manufacturing
Surfaces
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The authors present and discuss the C-V, I-V and TDDB (time-dependent dielectric breakdown) characteristics of textured interpoly capacitors fabricated with different process conditions. It is concluded that the combination of a rough storage electrode with a dielectric that has a bulk-limited conduction offers a considerable increase in capacitance while improving device reliability. Textured stacked capacitors (TSTCs) are proposed for the manufacture of 64-Mb DRAMs. Compared to other advanced stacked capacitor concepts, the approach drastically reduces process complexity and topography.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1990.237112