A two-dimensional numerical approach to achieve a silicon BCCD cell optimal design

The single charge stored in a silicon buried-channel charge-coupled device (BCCD) is studied under different technological specification. The approach is to seek an accurate determination of this parameter by using a 2-D numerical device analysis program. The calculated data are compared to experime...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1988-09, Vol.35 (9), p.1445-1455
Main Authors: Carquet, M., Rigaud, D., Touboul, A., Thenoz, Y.
Format: Article
Language:English
Subjects:
Applied sciences
Boron
Charge coupled devices
Charge transfer devices
Design optimization
Electronics
Exact sciences and technology
Implants
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal design
Silicon
Solid state circuits
Substrates
Very large scale integration
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Summary:The single charge stored in a silicon buried-channel charge-coupled device (BCCD) is studied under different technological specification. The approach is to seek an accurate determination of this parameter by using a 2-D numerical device analysis program. The calculated data are compared to experimentally measured BCCD characteristics. These investigations have led to some trends for design optimization for designers whose main motivation is the scaling down of BCCDs.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.2577