Single-event dynamics of high-performance HBTs and GaAs MESFETs

Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs (heterojunction bipolar transistors) following 3.0-MeV alpha -particle and 620-nm picosecond laser excitation reveal charge-collection efficiencies up to 28 times smaller than for GaAs MESFETs, with approximately 90% of the charge...

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Bibliographic Details
Published in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1993-12, Vol.40 (6), p.1858-1866
Main Authors: McMorrow, D., Weatherford, T., Knudson, A.R., Tran, L.H., Melinger, J.S., Campbell, A.B.
Format: Article
Language:English
Subjects:
ALPHA PARTICLES
Applied sciences
ARSENIC COMPOUNDS
ARSENIDES
CHARGE COLLECTION
Charge measurement
CHARGED PARTICLES
Current measurement
ELECTROMAGNETIC RADIATION
Electronics
Exact sciences and technology
FIELD EFFECT TRANSISTORS
Gallium arsenide
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
Heterojunction bipolar transistors
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
IONIZATION
JUNCTION TRANSISTORS
Laboratories
LASER RADIATION
MESFETs
Optical pulses
PHYSICAL RADIATION EFFECTS
PNICTIDES
Pulsed laser deposition
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Single event upset
Space technology
Transistors
TRANSISTORS 440200 > Radiation Effects on Instrument Components, Instruments, or Electronic Systems
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Summary:Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs (heterojunction bipolar transistors) following 3.0-MeV alpha -particle and 620-nm picosecond laser excitation reveal charge-collection efficiencies up to 28 times smaller than for GaAs MESFETs, with approximately 90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. It is shown that picosecond laser excitation reproduces the ion-induced transients nicely providing a valuable tool for the investigation of charge-collection and SEU (single event upset) phenomena in these devices.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.273469