Microwave performance of InGaAs/InP composite collector bipolar transistors

A composite collector heterostructure InGaAs/InP bipolar transistor (CCHBT) is described. The collector design assures both the high breakdown voltage, BV/sub CEO/, and the high speed needed for practical IC applications. The microwave performance of the CCHBT is presented. The authors have fabricat...

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Bibliographic Details
Main Authors: Feygenson, A., Hamm, R.A., Smith, P.R., Montgomery, R.K., Ritter, D., Yadvish, R.D., Temkin, H.
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
Bipolar transistors
Current density
Current measurement
Doping
Heterojunctions
Indium gallium arsenide
Indium phosphide
Microwave transistors
Scattering
Online Access:Request full text
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Summary:A composite collector heterostructure InGaAs/InP bipolar transistor (CCHBT) is described. The collector design assures both the high breakdown voltage, BV/sub CEO/, and the high speed needed for practical IC applications. The microwave performance of the CCHBT is presented. The authors have fabricated and tested monolithic transimpedance amplifiers based on these composite collector transistors. A bandwidth of 28 GHz and a gain of 40 dB Omega were obtained.< >
DOI:10.1109/BIPOL.1992.274090