Broadband high-efficiency HBT MMIC power amplifier fabricated with re-aligned process

The design and performance of a 6-10-GHz heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifier that produces 1.25 to 2.15 W at 30 to 46% power-added efficiency with 9.5 to 12.5 dB of power gain are described. With only 500 mu m/sup 2/ of output periph...

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Bibliographic Details
Main Authors: Komiak, J.J., Yang, L.W., Brozovich, R.S., Fu, S.T., Smith, D.P.
Format: Conference Proceeding
Language:English
Subjects:
Bipolar integrated circuits
Broadband amplifiers
Heterojunction bipolar transistors
High power amplifiers
Microwave amplifiers
Microwave integrated circuits
MMICs
Monolithic integrated circuits
Power amplifiers
Process design
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Description
Summary:The design and performance of a 6-10-GHz heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifier that produces 1.25 to 2.15 W at 30 to 46% power-added efficiency with 9.5 to 12.5 dB of power gain are described. With only 500 mu m/sup 2/ of output periphery, record MMIC HPA (high-power amplifier) power densities of 2.5 to 4.3 mW/ mu m/sup 2/ have been demonstrated.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1993.276719