Broadband high-efficiency HBT MMIC power amplifier fabricated with re-aligned process

The design and performance of a 6-10-GHz heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifier that produces 1.25 to 2.15 W at 30 to 46% power-added efficiency with 9.5 to 12.5 dB of power gain are described. With only 500 mu m/sup 2/ of output periph...

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Main Authors: Komiak, J.J., Yang, L.W., Brozovich, R.S., Fu, S.T., Smith, D.P.
Format: Conference Proceeding
Language:English
Subjects:
Bipolar integrated circuits
Broadband amplifiers
Heterojunction bipolar transistors
High power amplifiers
Microwave amplifiers
Microwave integrated circuits
MMICs
Monolithic integrated circuits
Power amplifiers
Process design
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creator Komiak, J.J.
Yang, L.W.
Brozovich, R.S.
Fu, S.T.
Smith, D.P.
description The design and performance of a 6-10-GHz heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifier that produces 1.25 to 2.15 W at 30 to 46% power-added efficiency with 9.5 to 12.5 dB of power gain are described. With only 500 mu m/sup 2/ of output periphery, record MMIC HPA (high-power amplifier) power densities of 2.5 to 4.3 mW/ mu m/sup 2/ have been demonstrated.< >
doi_str_mv 10.1109/MWSYM.1993.276719
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identifier ISSN: 0149-645X
ispartof 1993 IEEE MTT-S International Microwave Symposium Digest, 1993, p.1473-1476 vol.3
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source IEEE Xplore All Conference Series
subjects Bipolar integrated circuits
Broadband amplifiers
Heterojunction bipolar transistors
High power amplifiers
Microwave amplifiers
Microwave integrated circuits
MMICs
Monolithic integrated circuits
Power amplifiers
Process design
title Broadband high-efficiency HBT MMIC power amplifier fabricated with re-aligned process
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