Miniaturized, X-band solid-state transmitter

A compact X-band solid-state transmitter capable of 26-W peak output power with state-of-the-art frequency stability is reported. A dielectric resonator oscillator (DRO), used as a frequency source, has a frequency stability of 80 parts per million over the temperature range of -50 degrees C to +50...

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Bibliographic Details
Main Authors: Mizan, M., Sturzebecher, D., Higgins, T., Maluszczak, E.
Format: Conference Proceeding
Language:English
Subjects:
Dielectrics
Frequency
Power amplifiers
Power generation
Pulse amplifiers
Pulse modulation
Radiofrequency amplifiers
Solid state circuits
Stability
Transmitters
Online Access:Request full text
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Description
Summary:A compact X-band solid-state transmitter capable of 26-W peak output power with state-of-the-art frequency stability is reported. A dielectric resonator oscillator (DRO), used as a frequency source, has a frequency stability of 80 parts per million over the temperature range of -50 degrees C to +50 degrees C. A six-stage GaAs MESFET RF amplifier, with an associated gain of 37 dB, also functions as a pulse modulator by changing the gate bias voltages. The last amplifier stage consists of four amplifiers operating in a power combining configuration. The transmitter, including the pulse modulator, is packaged into 7.6 cm*5.1 cm*2.5 cm and has a total weight of 0.22 kg. The transmitter operates from a +or-12-V battery and has an overall DC to RF conversion efficiency of 15%.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1993.276750