A 7 to 11 GHz AlInAs/GaInAs/InP MMIC low noise amplifier

Two-stage monolithic microwave integrated circuit (MMIC) low-noise amplifiers (LNAs) have been fabricated using 0.15- mu m gate-length InP-based AlInAs/GaInAs high electron mobility transistors (HEMTs). The LNAs showed less than 1.2-dB noise figure and 21-22-dB gain over the 7-11-GHz band. These res...

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Bibliographic Details
Main Authors: Rosenbaum, S.E., Chou, C.S., Ngo, C.M., Larson, L.E., Liu, T., Thompson, M.A.
Format: Conference Proceeding
Language:English
Subjects:
Broadband amplifiers
HEMTs
Indium phosphide
Integrated circuit noise
Low-noise amplifiers
Microwave integrated circuits
MMICs
MODFETs
Monolithic integrated circuits
Noise figure
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Description
Summary:Two-stage monolithic microwave integrated circuit (MMIC) low-noise amplifiers (LNAs) have been fabricated using 0.15- mu m gate-length InP-based AlInAs/GaInAs high electron mobility transistors (HEMTs). The LNAs showed less than 1.2-dB noise figure and 21-22-dB gain over the 7-11-GHz band. These results are believed to be the best reported to date for a broadband MMIC amplifier at these frequencies. The authors describe the fabrication technology, the design procedure, and the experimental results.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1993.277060