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A square-diaphragm piezoresistive pressure sensor with a rectangular central boss for low-pressure ranges
Describes the theory and experimental data for a piezoresistive low-pressure sensor featuring a variety of advantages. The objective of this development was a sensor with high sensitivity, high overload range, and good linearity. In comparison to familiar sensor types, the sensor developed for the p...
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Published in: | IEEE transactions on electron devices 1993-10, Vol.40 (10), p.1754-1759 |
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container_end_page | 1759 |
container_issue | 10 |
container_start_page | 1754 |
container_title | IEEE transactions on electron devices |
container_volume | 40 |
creator | Sandmaier, H. Kuhl, K. |
description | Describes the theory and experimental data for a piezoresistive low-pressure sensor featuring a variety of advantages. The objective of this development was a sensor with high sensitivity, high overload range, and good linearity. In comparison to familiar sensor types, the sensor developed for the pressure range of 10 kPa exhibits an excellent sensitivity of 35 mV/V FSO (full scale output) and nonlinearity |
doi_str_mv | 10.1109/16.277331 |
format | article |
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The objective of this development was a sensor with high sensitivity, high overload range, and good linearity. In comparison to familiar sensor types, the sensor developed for the pressure range of 10 kPa exhibits an excellent sensitivity of 35 mV/V FSO (full scale output) and nonlinearity <+or-0.05%. The sensor's theoretical performance was confirmed by measurements on manufactured pressure sensors.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.277331</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Acoustic wave devices, piezoelectric and piezoresistive devices ; Applied sciences ; Bridge circuits ; Electronics ; Exact sciences and technology ; Linearity ; Mechanical sensors ; Piezoresistance ; Pressure measurement ; Resistors ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The objective of this development was a sensor with high sensitivity, high overload range, and good linearity. In comparison to familiar sensor types, the sensor developed for the pressure range of 10 kPa exhibits an excellent sensitivity of 35 mV/V FSO (full scale output) and nonlinearity <+or-0.05%. The sensor's theoretical performance was confirmed by measurements on manufactured pressure sensors.< ></description><subject>Acoustic wave devices, piezoelectric and piezoresistive devices</subject><subject>Applied sciences</subject><subject>Bridge circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Linearity</subject><subject>Mechanical sensors</subject><subject>Piezoresistance</subject><subject>Pressure measurement</subject><subject>Resistors</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Solid state devices</topic><topic>Sensor phenomena and characterization</topic><topic>Silicon</topic><topic>Stress</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sandmaier, H.</creatorcontrib><creatorcontrib>Kuhl, K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sandmaier, H.</au><au>Kuhl, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A square-diaphragm piezoresistive pressure sensor with a rectangular central boss for low-pressure ranges</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1993-10-01</date><risdate>1993</risdate><volume>40</volume><issue>10</issue><spage>1754</spage><epage>1759</epage><pages>1754-1759</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Describes the theory and experimental data for a piezoresistive low-pressure sensor featuring a variety of advantages. The objective of this development was a sensor with high sensitivity, high overload range, and good linearity. In comparison to familiar sensor types, the sensor developed for the pressure range of 10 kPa exhibits an excellent sensitivity of 35 mV/V FSO (full scale output) and nonlinearity <+or-0.05%. The sensor's theoretical performance was confirmed by measurements on manufactured pressure sensors.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.277331</doi><tpages>6</tpages></addata></record> |
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ispartof | IEEE transactions on electron devices, 1993-10, Vol.40 (10), p.1754-1759 |
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language | eng |
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source | IEEE Xplore (Online service) |
subjects | Acoustic wave devices, piezoelectric and piezoresistive devices Applied sciences Bridge circuits Electronics Exact sciences and technology Linearity Mechanical sensors Piezoresistance Pressure measurement Resistors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensor phenomena and characterization Silicon Stress Voltage |
title | A square-diaphragm piezoresistive pressure sensor with a rectangular central boss for low-pressure ranges |
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