Differentiating impacts of hole trapping vs. interface states on TDDB reduction in thin oxide gated diode structures

Prestress induced reduction of time dependent dielectric breakdown (TDDB) in MOSFETs is considered. In this study, different prestress conditions using a gated diode structure were designed. Each stress condition is set to generate hole trapping in the thin gate oxide and/or interface states to a di...

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Bibliographic Details
Main Authors: Tang, Y., Chang, C., Haddad, S., Wang, A., Lien, J.
Format: Conference Proceeding
Language:English
Subjects:
Avalanche breakdown
Charge carrier processes
Current measurement
Dielectric breakdown
Diodes
Electron traps
Hot carriers
Interface states
Stress
Tunneling
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Summary:Prestress induced reduction of time dependent dielectric breakdown (TDDB) in MOSFETs is considered. In this study, different prestress conditions using a gated diode structure were designed. Each stress condition is set to generate hole trapping in the thin gate oxide and/or interface states to a different extent, thus allowing differentiation of their effects on TDDB. The experimental data suggest that TDDB reduction is strongly correlated with Si/SiO/sub 2/ interface damage created by hot carriers, while stress induced hole trapping alone does not appear to directly contribute to TDDB reduction.< >
DOI:10.1109/RELPHY.1993.283315