Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

3C-SiC (/spl beta/-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electr...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1994-05, Vol.41 (5), p.826-835
Main Authors: Neudeck, P.G., Larkin, D.J., Starr, J.E., Powell, J.A., Salupo, C.S., Matus, L.G.
Format: Article
Language:English
Subjects:
426000 - Engineering- Components, Electron Devices & Circuits- (1990-)
Applied sciences
CARBIDES
CARBON COMPOUNDS
Chemical vapor deposition
DATA
Diodes
DOPED MATERIALS
Doping
Electric variables
Electric variables measurement
ELECTRICAL PROPERTIES
Electronics
Electronics And Electrical Engineering
ENGINEERING
Epitaxial layers
Exact sciences and technology
EXPERIMENTAL DATA
FABRICATION
INFORMATION
JUNCTION DIODES
MATERIALS
NUMERICAL DATA
P-n junctions
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SILICON CARBIDES
SILICON COMPOUNDS
Substrates
Temperature
TEMPERATURE DEPENDENCE
Voltage
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Summary:3C-SiC (/spl beta/-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the SC-SiC diodes emit significantly bright green-yellow light while the 6H SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (
ISSN:0018-9383
1557-9646
DOI:10.1109/16.285038