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Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates
3C-SiC (/spl beta/-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electr...
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| Published in: | IEEE transactions on electron devices 1994-05, Vol.41 (5), p.826-835 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c366t-a5061eac060a7baca222078be9e671f9f97c68d2d6a35fa18d10aece5c198e2b3 |
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| cites | cdi_FETCH-LOGICAL-c366t-a5061eac060a7baca222078be9e671f9f97c68d2d6a35fa18d10aece5c198e2b3 |
| container_end_page | 835 |
| container_issue | 5 |
| container_start_page | 826 |
| container_title | IEEE transactions on electron devices |
| container_volume | 41 |
| creator | Neudeck, P.G. Larkin, D.J. Starr, J.E. Powell, J.A. Salupo, C.S. Matus, L.G. |
| description | 3C-SiC (/spl beta/-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the SC-SiC diodes emit significantly bright green-yellow light while the 6H SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle ( |
| doi_str_mv | 10.1109/16.285038 |
| format | article |
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Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the SC-SiC diodes emit significantly bright green-yellow light while the 6H SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (<0.5/spl deg/ off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 /spl mu/m diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400/spl deg/C.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.285038</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>Legacy CDMS: IEEE</publisher><subject>426000 - Engineering- Components, Electron Devices & Circuits- (1990-) ; Applied sciences ; CARBIDES ; CARBON COMPOUNDS ; Chemical vapor deposition ; DATA ; Diodes ; DOPED MATERIALS ; Doping ; Electric variables ; Electric variables measurement ; ELECTRICAL PROPERTIES ; Electronics ; Electronics And Electrical Engineering ; ENGINEERING ; Epitaxial layers ; Exact sciences and technology ; EXPERIMENTAL DATA ; FABRICATION ; INFORMATION ; JUNCTION DIODES ; MATERIALS ; NUMERICAL DATA ; P-n junctions ; PHYSICAL PROPERTIES ; SEMICONDUCTOR DEVICES ; SEMICONDUCTOR DIODES ; Semiconductor electronics. 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Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the SC-SiC diodes emit significantly bright green-yellow light while the 6H SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (<0.5/spl deg/ off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 /spl mu/m diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400/spl deg/C.< ></description><subject>426000 - Engineering- Components, Electron Devices & Circuits- (1990-)</subject><subject>Applied sciences</subject><subject>CARBIDES</subject><subject>CARBON COMPOUNDS</subject><subject>Chemical vapor deposition</subject><subject>DATA</subject><subject>Diodes</subject><subject>DOPED MATERIALS</subject><subject>Doping</subject><subject>Electric variables</subject><subject>Electric variables measurement</subject><subject>ELECTRICAL PROPERTIES</subject><subject>Electronics</subject><subject>Electronics And Electrical Engineering</subject><subject>ENGINEERING</subject><subject>Epitaxial layers</subject><subject>Exact sciences and technology</subject><subject>EXPERIMENTAL DATA</subject><subject>FABRICATION</subject><subject>INFORMATION</subject><subject>JUNCTION DIODES</subject><subject>MATERIALS</subject><subject>NUMERICAL DATA</subject><subject>P-n junctions</subject><subject>PHYSICAL PROPERTIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTOR DIODES</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SILICON CARBIDES</subject><subject>SILICON COMPOUNDS</subject><subject>Substrates</subject><subject>Temperature</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqFkc1rFjEQxhdR8LV68CoegkjBQ2o-drPJsbzUVih4UM9hNjuLKdvsmsmC_e9N3ZdePQ3J83vmmWSa5q0UF1IK91maC2U7oe2z5iC7rufOtOZ5cxBCWu601S-bV0R39WjaVh2a9WrGUHIMMLM1LyvmEpHYMjFcY4E_sd7rI2eQRmZu-Pd4ZCtP7G5LocQlsTEuY-WrddwCjoziiHx44I-VVf3koW2gkqEgvW5eTDATvjnVs-bnl6sfxxt---366_HylgdtTOHQCSMRgjAC-gECKKVEbwd0aHo5ucn1wdhRjQZ0N4G0oxSAAbsgnUU16LPmw953oRI9hVgw_ApLSvW53rjOattV6HyH6vy_N6Ti7yMFnGdIuGzkldXattb9HzSttq4XFfy0gyEvRBknv-Z4D_nBS-EfN-Sl8fuGKvvx1BSo_v-UIYVIT4ZWtkr_y36_YwkIfCqZvHSuE6JG9qrK73Y5IuKT-RTxF1V-n18</recordid><startdate>19940501</startdate><enddate>19940501</enddate><creator>Neudeck, P.G.</creator><creator>Larkin, D.J.</creator><creator>Starr, J.E.</creator><creator>Powell, J.A.</creator><creator>Salupo, C.S.</creator><creator>Matus, L.G.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>CYE</scope><scope>CYI</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>OTOTI</scope></search><sort><creationdate>19940501</creationdate><title>Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates</title><author>Neudeck, P.G. ; Larkin, D.J. ; Starr, J.E. ; Powell, J.A. ; Salupo, C.S. ; Matus, L.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c366t-a5061eac060a7baca222078be9e671f9f97c68d2d6a35fa18d10aece5c198e2b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>426000 - Engineering- Components, Electron Devices & Circuits- (1990-)</topic><topic>Applied sciences</topic><topic>CARBIDES</topic><topic>CARBON COMPOUNDS</topic><topic>Chemical vapor deposition</topic><topic>DATA</topic><topic>Diodes</topic><topic>DOPED MATERIALS</topic><topic>Doping</topic><topic>Electric variables</topic><topic>Electric variables measurement</topic><topic>ELECTRICAL PROPERTIES</topic><topic>Electronics</topic><topic>Electronics And Electrical Engineering</topic><topic>ENGINEERING</topic><topic>Epitaxial layers</topic><topic>Exact sciences and technology</topic><topic>EXPERIMENTAL DATA</topic><topic>FABRICATION</topic><topic>INFORMATION</topic><topic>JUNCTION DIODES</topic><topic>MATERIALS</topic><topic>NUMERICAL DATA</topic><topic>P-n junctions</topic><topic>PHYSICAL PROPERTIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTOR DIODES</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SILICON CARBIDES</topic><topic>SILICON COMPOUNDS</topic><topic>Substrates</topic><topic>Temperature</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Neudeck, P.G.</creatorcontrib><creatorcontrib>Larkin, D.J.</creatorcontrib><creatorcontrib>Starr, J.E.</creatorcontrib><creatorcontrib>Powell, J.A.</creatorcontrib><creatorcontrib>Salupo, C.S.</creatorcontrib><creatorcontrib>Matus, L.G.</creatorcontrib><collection>NASA Scientific and Technical Information</collection><collection>NASA Technical Reports Server</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>OSTI.GOV</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Neudeck, P.G.</au><au>Larkin, D.J.</au><au>Starr, J.E.</au><au>Powell, J.A.</au><au>Salupo, C.S.</au><au>Matus, L.G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1994-05-01</date><risdate>1994</risdate><volume>41</volume><issue>5</issue><spage>826</spage><epage>835</epage><pages>826-835</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>3C-SiC (/spl beta/-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the SC-SiC diodes emit significantly bright green-yellow light while the 6H SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (<0.5/spl deg/ off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 /spl mu/m diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400/spl deg/C.< ></abstract><cop>Legacy CDMS</cop><pub>IEEE</pub><doi>10.1109/16.285038</doi><tpages>10</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1994-05, Vol.41 (5), p.826-835 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_ieee_primary_285038 |
| source | IEEE Electronic Library (IEL) Journals |
| subjects | 426000 - Engineering- Components, Electron Devices & Circuits- (1990-) Applied sciences CARBIDES CARBON COMPOUNDS Chemical vapor deposition DATA Diodes DOPED MATERIALS Doping Electric variables Electric variables measurement ELECTRICAL PROPERTIES Electronics Electronics And Electrical Engineering ENGINEERING Epitaxial layers Exact sciences and technology EXPERIMENTAL DATA FABRICATION INFORMATION JUNCTION DIODES MATERIALS NUMERICAL DATA P-n junctions PHYSICAL PROPERTIES SEMICONDUCTOR DEVICES SEMICONDUCTOR DIODES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SILICON CARBIDES SILICON COMPOUNDS Substrates Temperature TEMPERATURE DEPENDENCE Voltage |
| title | Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates |
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