Optoelectronic integration of a GaAs/AlGaAs bistable field effect transistor (BISFET) and LED

The bistable field effect transistor (BISFET) is a novel inversion-channel switching device exhibiting abrupt current transitions and hysteresis in its output characteristics. The semiconductor structure of the BISFET is compatible with a range of electronic and optoelectronic devices. In this work,...

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Bibliographic Details
Published in:IEEE electron device letters 1994-02, Vol.15 (2), p.57-59
Main Authors: Ojha, J.J., Simmons, J.G., Mand, R.S., SpringThorpe, A.J.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Circuits
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
FETs
Gallium arsenide
Hysteresis
Integrated optoelectronics. Optoelectronic circuits
Light emitting diodes
Optical and optoelectronic circuits
Optical bistability
Optical device fabrication
Optoelectronic devices
Substrates
Voltage
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Summary:The bistable field effect transistor (BISFET) is a novel inversion-channel switching device exhibiting abrupt current transitions and hysteresis in its output characteristics. The semiconductor structure of the BISFET is compatible with a range of electronic and optoelectronic devices. In this work, integration of a BISFET with an LED is reported. Both devices have been implemented on a single semiconductor substrate using a single fabrication sequence. The BISFET is used to current drive the LED. Abrupt transitions and hysteresis are seen in the optical output from the circuit in the range of gate voltage from 1.75 V to 1.9 V.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.285374