Design, optimization, and characterization of a low temperature RPECVD MOS gate stack process

Plasma-enhanced chemical vapor deposition (PECVD) allows film deposition in very short times and at low substrate temperatures. The use of remote plasma-enhanced chemical vapor deposition (RPECVD) to deposit an oxide insulator layer for a MOS gate stack structure within a single-wafer processing sys...

Full description

Saved in:
Bibliographic Details
Main Authors: Parker, C.G., Silvestre, C., Watkins, M., Keuhn, R.T., Hauser, J.R.
Format: Conference Proceeding
Language:English
Subjects:
Chemical vapor deposition
Design optimization
Government
Insulation
Plasma applications
Plasma chemistry
Plasma materials processing
Plasma temperature
Substrates
Testing
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Plasma-enhanced chemical vapor deposition (PECVD) allows film deposition in very short times and at low substrate temperatures. The use of remote plasma-enhanced chemical vapor deposition (RPECVD) to deposit an oxide insulator layer for a MOS gate stack structure within a single-wafer processing system is reported. The project background including government and industry support is presented. The design of the RPECVD chamber and optimization of deposition parameters are discussed. Characterization of the oxide quality through device testing is presented.< >
ISSN:0749-6877
2375-5350
DOI:10.1109/UGIM.1993.297054