Edge terminations for SiC high voltage Schottky rectifiers

A study of floating metal field rings (FMRs) and resistive Schottky barrier field plate (RESP) edge terminations for high-voltage silicon carbide (SiC) Schottky barrier diodes (SBD) is reported. For a drift region doping of 2*10/sup 16/ cm/sup -3/, numerical simulations indicated a breakdown voltage...

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Bibliographic Details
Main Authors: Bhatnagar, M., Nakanishi, H., Bothra, S., McLarty, P.K., Baliga, B.J.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Analytical models
Design optimization
Doping
Magnetic resonance
Numerical simulation
Rectifiers
Schottky barriers
Schottky diodes
Silicon carbide
Voltage
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Summary:A study of floating metal field rings (FMRs) and resistive Schottky barrier field plate (RESP) edge terminations for high-voltage silicon carbide (SiC) Schottky barrier diodes (SBD) is reported. For a drift region doping of 2*10/sup 16/ cm/sup -3/, numerical simulations indicated a breakdown voltage for an unterminated diode of about 225 V as compared to approximately=1125 V for a parallel plane structure. For the FMR termination, simulations indicate a breakdown voltage of approximately=600 V for a three-ring termination with a ring spacing of 0.8 mu m. Experimentally determined breakdown voltages of SiC SBDs fabricated using FMR termination were >400 V as compared to approximately=220 V for unterminated diodes. For the RESP termination, an analytical model was developed to study the effect of various design parameters, such as RESP length and sheet-resistance, on the breakdown voltage. This model was used to optimize various design parameters for SBDs fabricated using RESP termination.< >
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.1993.297115