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Domain orientation and piezoelectric properties of Ag doped PMN-PZT ceramics
The hysteresis, dielectric, and piezoelectric properties of ternary 0.5PMN-0.5-PZT (lead magnesium niobate-lead zirconate titanate) ceramics with Ag substitution are described. These ceramics show good square hysteresis loops and thus are promising for thin-film memory applications. At high Ag conce...
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Main Authors: | , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Citations: | Items that cite this one |
Online Access: | Request full text |
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Summary: | The hysteresis, dielectric, and piezoelectric properties of ternary 0.5PMN-0.5-PZT (lead magnesium niobate-lead zirconate titanate) ceramics with Ag substitution are described. These ceramics show good square hysteresis loops and thus are promising for thin-film memory applications. At high Ag concentrations the dielectric loss decreased, indicating an increase in the ordering of the structure. A marked increase in the piezoelectric properties, particularly the thickness coupling factor and the piezoelectric charge coefficient, d/sub 33/, was observed.< > |
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DOI: | 10.1109/ISAF.1992.300646 |