Dielectric behavior of ferroelectric thin films at high frequencies

The high-frequency dielectric response of sol-gel-derived lead zirconate titanate (PZT) thin films have been investigated. Conceptualizing the presence of interface layers was critical in explaining the dielectric measurements. By a careful control of the processing parameters, aided by rapid therma...

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Bibliographic Details
Main Authors: Chen, J., Udayakumar, K.R., Brooks, K.G., Cross, L.E.
Format: Conference Proceeding
Language:English
Subjects:
Dielectric measurements
Dielectric thin films
Ferroelectric materials
Frequency
Process control
Rapid thermal annealing
Rapid thermal processing
Strontium
Temperature
Titanium compounds
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Summary:The high-frequency dielectric response of sol-gel-derived lead zirconate titanate (PZT) thin films have been investigated. Conceptualizing the presence of interface layers was critical in explaining the dielectric measurements. By a careful control of the processing parameters, aided by rapid thermal annealing, the low-frequency dielectric characteristics could be sustained up to a gigahertz range. Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/, which is paraelectric at room temperature, appears to be a potential candidate material for high-frequency applications.< >
DOI:10.1109/ISAF.1992.300657