Interband-tunneling III-V semiconductor structures for multiple-valued literal and arithmetic functions

Earlier MVL circuits used resonant tunneling devices based on intraband tunneling. Recently device concepts were explored in the AlSb/InAs system based on interband tunneling. Here non-resonant tunneling discharge from the 2DEG is effected into p/sup +/ doped InAs gates, whereas the 2DEG current is...

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Bibliographic Details
Main Authors: Micheel, L.J., Hartnagel, H.L., Anderson, W.T., Kirchoefer, S.W., Papanicolaou, N.A.
Format: Conference Proceeding
Language:English
Subjects:
Adders
Arithmetic
Circuits
Electrons
HEMTs
III-V semiconductor materials
Microwave technology
Pattern recognition
Resonant tunneling devices
Stability
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Summary:Earlier MVL circuits used resonant tunneling devices based on intraband tunneling. Recently device concepts were explored in the AlSb/InAs system based on interband tunneling. Here non-resonant tunneling discharge from the 2DEG is effected into p/sup +/ doped InAs gates, whereas the 2DEG current is controlled with a Schottky gate as in the conventional HEMT. A wide range of physical and functional device features is possible. Linear properties of the proposed tunneling HEMTs are used for signal summation. The authors explore basic ternary half adders and redundant MVL full adders. The interband tunneling also leads to highly effective literal circuits with applications in MVL synthesis and pattern recognition. Vertically integrated tunnel gates are introduced. Recommendations for experiments and further theoretical work conclude this paper.< >
DOI:10.1109/ISMVL.1994.302200