SRAM-based extraction of defect characteristics

In modern IC manufacturing, extraction of defect characteristics for yield estimation is of prime importance. Test structure based defect characterization procedures suffer from two drawbacks-wastage of silicon area and short-loop mode of operation. This paper presents a SRAM-based characterization...

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Bibliographic Details
Main Authors: Khare, J., Maly, W., Griep, S., Schmitt-Landsiedel, D.
Format: Conference Proceeding
Language:English
Subjects:
Circuit faults
Computer aided manufacturing
Manufacturing industries
Modems
Monitoring
Random access memory
Semiconductor device manufacture
Silicon
Testing
Yield estimation
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Summary:In modern IC manufacturing, extraction of defect characteristics for yield estimation is of prime importance. Test structure based defect characterization procedures suffer from two drawbacks-wastage of silicon area and short-loop mode of operation. This paper presents a SRAM-based characterization methodology, which can eliminate both the above drawbacks. The application of this methodology is also illustrated by means of an industrial experiment, which indicates that the procedure can be applied to all defect types for which the SRAM monitor has a high resolution of diagnosis.< >
DOI:10.1109/ICMTS.1994.303494