Polycrystalline-silicon thin-film transistor technology for low cost, high-power integrated circuits

The feasibility of fabricating power ICs by integrating CMOS logic and control elements formed from polycrystalline-silicon thin-film transistors (TFTs) on the field oxide of single-crystal, vertical-current flow, power devices is described. Complete, dielectric, isolation between the TFT control el...

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Bibliographic Details
Main Authors: Dolny, Ipri, Nostrand, Wheatley, Wodarczyk
Format: Conference Proceeding
Language:English
Subjects:
CMOS integrated circuits
Integrated circuit fabrication
Power integrated circuits
Silicon
Thin film transistors
Online Access:Request full text
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Description
Summary:The feasibility of fabricating power ICs by integrating CMOS logic and control elements formed from polycrystalline-silicon thin-film transistors (TFTs) on the field oxide of single-crystal, vertical-current flow, power devices is described. Complete, dielectric, isolation between the TFT control elements and the power output device is thus provided in a simple, low-cost process. The device and circuit characteristics of the integrated TFT/vertical power devices are described. Functional power ICs using this technology are demonstrated.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1992.307349