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Very high voltage AlGaAs/InGaAs pseudomorphic power HEMTs
This paper reports the development of double recessed pseudomorphic GaAs High Electron Mobility Transistors (HEMTs) for high voltage operation. The GaAs-based power HEMT with 0.25 mu m gate-length exhibited a gate to drain breakdown voltage of 30 volts, a peak g/sub m/ of 510 mS/mm, and a maximum cu...
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| creator | Ming-Yih Kao Shih-Tsang Fu Pin Ho Smith Chao Nordheden Sujane Wang |
| description | This paper reports the development of double recessed pseudomorphic GaAs High Electron Mobility Transistors (HEMTs) for high voltage operation. The GaAs-based power HEMT with 0.25 mu m gate-length exhibited a gate to drain breakdown voltage of 30 volts, a peak g/sub m/ of 510 mS/mm, and a maximum current density of 540 mA/mm. When biased to 14 volts on the drain, the 400 mu m wide HEMT delivered 505 mW (1.26 W/mm) output power at 4.5 GHz. This is the highest output power density and drain-source operating voltage ever reported for HEMT devices. The device also showed excellent 4.5 and 10 GHz power performance combination (power gain, power density, power-added efficiency) at V/sub ds/=8V. The significant extension of device drain bias range as well as increase in the product of current density and breakdown voltage were attributed to the adoption of channel recess using reactive ion etching.< > |
| doi_str_mv | 10.1109/IEDM.1992.307369 |
| format | conference_proceeding |
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The GaAs-based power HEMT with 0.25 mu m gate-length exhibited a gate to drain breakdown voltage of 30 volts, a peak g/sub m/ of 510 mS/mm, and a maximum current density of 540 mA/mm. When biased to 14 volts on the drain, the 400 mu m wide HEMT delivered 505 mW (1.26 W/mm) output power at 4.5 GHz. This is the highest output power density and drain-source operating voltage ever reported for HEMT devices. The device also showed excellent 4.5 and 10 GHz power performance combination (power gain, power density, power-added efficiency) at V/sub ds/=8V. The significant extension of device drain bias range as well as increase in the product of current density and breakdown voltage were attributed to the adoption of channel recess using reactive ion etching.< ></description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 0780308174</identifier><identifier>ISBN: 9780780308176</identifier><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.1992.307369</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum compounds ; Gallium compounds ; Indium compounds ; Microwave devices ; MODFETs ; Power transistors ; Semiconductor device fabrication ; Sputter etching</subject><ispartof>1992 International Technical Digest on Electron Devices Meeting, 1992, p.319-321</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/307369$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54555,54920,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/307369$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ming-Yih Kao</creatorcontrib><creatorcontrib>Shih-Tsang Fu</creatorcontrib><creatorcontrib>Pin Ho</creatorcontrib><creatorcontrib>Smith</creatorcontrib><creatorcontrib>Chao</creatorcontrib><creatorcontrib>Nordheden</creatorcontrib><creatorcontrib>Sujane Wang</creatorcontrib><title>Very high voltage AlGaAs/InGaAs pseudomorphic power HEMTs</title><title>1992 International Technical Digest on Electron Devices Meeting</title><addtitle>IEDM</addtitle><description>This paper reports the development of double recessed pseudomorphic GaAs High Electron Mobility Transistors (HEMTs) for high voltage operation. 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The significant extension of device drain bias range as well as increase in the product of current density and breakdown voltage were attributed to the adoption of channel recess using reactive ion etching.< ></description><subject>Aluminum compounds</subject><subject>Gallium compounds</subject><subject>Indium compounds</subject><subject>Microwave devices</subject><subject>MODFETs</subject><subject>Power transistors</subject><subject>Semiconductor device fabrication</subject><subject>Sputter etching</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>0780308174</isbn><isbn>9780780308176</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1992</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotz09LwzAYgPGgE-ymd_GUL9DuTdL8eY9l1q2w4aUMbyNN07XS2dJMZd9eZJ5-twceQp4YJIwBLov8ZZcwRJ4I0ELhDYk4kyoGpt9vyRy0AQGG6XRGImBKxAyZuSfzED4AuJYoI4J7P11o2x1b-j30Z3v0NOvXNgvL4vMPOgb_VQ-nYRrbztFx-PET3eS7MjyQu8b2wT_-uyDla16uNvH2bV2ssm3cGTzHqU2Nl65ygBx5qjRAg9IKoRTUHDXUznDnuBfouBGMozBVqmyFHkE2IBbk-ZrtvPeHcepOdrocrsPiF3GgRdQ</recordid><startdate>1992</startdate><enddate>1992</enddate><creator>Ming-Yih Kao</creator><creator>Shih-Tsang Fu</creator><creator>Pin Ho</creator><creator>Smith</creator><creator>Chao</creator><creator>Nordheden</creator><creator>Sujane Wang</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1992</creationdate><title>Very high voltage AlGaAs/InGaAs pseudomorphic power HEMTs</title><author>Ming-Yih Kao ; Shih-Tsang Fu ; Pin Ho ; Smith ; Chao ; Nordheden ; Sujane Wang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i89t-4a48e5cbc0929246700f95a33660d2970dc82cc2e39c28312938b46ab9e905f03</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Aluminum compounds</topic><topic>Gallium compounds</topic><topic>Indium compounds</topic><topic>Microwave devices</topic><topic>MODFETs</topic><topic>Power transistors</topic><topic>Semiconductor device fabrication</topic><topic>Sputter etching</topic><toplevel>online_resources</toplevel><creatorcontrib>Ming-Yih Kao</creatorcontrib><creatorcontrib>Shih-Tsang Fu</creatorcontrib><creatorcontrib>Pin Ho</creatorcontrib><creatorcontrib>Smith</creatorcontrib><creatorcontrib>Chao</creatorcontrib><creatorcontrib>Nordheden</creatorcontrib><creatorcontrib>Sujane Wang</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ming-Yih Kao</au><au>Shih-Tsang Fu</au><au>Pin Ho</au><au>Smith</au><au>Chao</au><au>Nordheden</au><au>Sujane Wang</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Very high voltage AlGaAs/InGaAs pseudomorphic power HEMTs</atitle><btitle>1992 International Technical Digest on Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>1992</date><risdate>1992</risdate><spage>319</spage><epage>321</epage><pages>319-321</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>0780308174</isbn><isbn>9780780308176</isbn><abstract>This paper reports the development of double recessed pseudomorphic GaAs High Electron Mobility Transistors (HEMTs) for high voltage operation. The GaAs-based power HEMT with 0.25 mu m gate-length exhibited a gate to drain breakdown voltage of 30 volts, a peak g/sub m/ of 510 mS/mm, and a maximum current density of 540 mA/mm. When biased to 14 volts on the drain, the 400 mu m wide HEMT delivered 505 mW (1.26 W/mm) output power at 4.5 GHz. This is the highest output power density and drain-source operating voltage ever reported for HEMT devices. The device also showed excellent 4.5 and 10 GHz power performance combination (power gain, power density, power-added efficiency) at V/sub ds/=8V. The significant extension of device drain bias range as well as increase in the product of current density and breakdown voltage were attributed to the adoption of channel recess using reactive ion etching.< ></abstract><pub>IEEE</pub><doi>10.1109/IEDM.1992.307369</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0163-1918 |
| ispartof | 1992 International Technical Digest on Electron Devices Meeting, 1992, p.319-321 |
| issn | 0163-1918 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_307369 |
| source | IEEE Xplore All Conference Series |
| subjects | Aluminum compounds Gallium compounds Indium compounds Microwave devices MODFETs Power transistors Semiconductor device fabrication Sputter etching |
| title | Very high voltage AlGaAs/InGaAs pseudomorphic power HEMTs |
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