Field emission imaging study of silicon field emitters

The behavior of electron emission from pyramid-shaped silicon field emitters has been studied by direct imaging of electron emission as well as by emission current-voltage measurement. Oxide covered silicon emitter surfaces have resulted in structureless emission patterns. The electron emitting angl...

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Bibliographic Details
Main Authors: Jiang Liu, Hren, Sune, Jones, Gray
Format: Conference Proceeding
Language:English
Subjects:
Current measurement
Image sensors
Optical fiber transducers
Silicon
Vacuum microelectronics
Online Access:Request full text
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Summary:The behavior of electron emission from pyramid-shaped silicon field emitters has been studied by direct imaging of electron emission as well as by emission current-voltage measurement. Oxide covered silicon emitter surfaces have resulted in structureless emission patterns. The electron emitting angle is found to vary significantly with the extraction voltage or the emission current. Experimental measurement and analysis of emission images under moderate operating conditions showed that resulted final emitting angles are under 13 degrees while initial electron emitting angles from the emitter could be as high as 18 degrees .< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1992.307380