A new analytical model and the impact of base charge storage on base potential distribution, emitter current crowding and base resistance

DC emitter crowding effect is modeled analytically for the first time with minority charge storage taken into account. In contrast with previous work that neglected excess carriers, we find that the solution is well behaved without singularity and base voltage pinning. Expressions for base and colle...

Full description

Saved in:
Bibliographic Details
Main Authors: Tzu-Yin Chiu, Tien, Janmye Sung, Liu
Format: Conference Proceeding
Language:English
Subjects:
Bipolar transistors
Charge carrier processes
Current
Resistance
Semiconductor device modeling
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:DC emitter crowding effect is modeled analytically for the first time with minority charge storage taken into account. In contrast with previous work that neglected excess carriers, we find that the solution is well behaved without singularity and base voltage pinning. Expressions for base and collector current, large signal and small signal base resistance are also derived. We prove that excess base charge can be monitored using a split base structure. Conductance between the two split base electrodes is a linear function of collector current, independent of emitter current crowding, and its slope is directly proportional to base transit time.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1992.307427