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A comparison of two micromachined inductors (bar-type and meander-type) for fully integrated boost DC/DC power converters
Two micromachined integrated inductors (bar-type and meander-type) are realized on a silicon wafer by using modified, IC-compatible, multilevel metallization techniques. Efforts are made to minimize both the coil resistance and the magnetic reluctance by using thick electroplated conductors, cores,...
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Main Authors: | , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | Two micromachined integrated inductors (bar-type and meander-type) are realized on a silicon wafer by using modified, IC-compatible, multilevel metallization techniques. Efforts are made to minimize both the coil resistance and the magnetic reluctance by using thick electroplated conductors, cores, and vias. In the bar-type inductor, a 25 /spl mu/m thick nickel-iron permalloy magnetic core bar is wrapped with 30 /spl mu/m thick multilevel copper conductor lines. For an inductor size of 4 mm/spl times/1.0 mm/spl times/110 /spl mu/m thickness having 33 turns of multilevel coils, the achieved specific inductance is approximately 30 nH/mm/sup 2/ at 1 Mhz. In the meander-type inductor, the roles of conductor wire and magnetic core are switched, i.e., a magnetic core is wrapped around a conductor wire. This inductor size is 4 mm/spl times/1.0 mm/spl times/130 /spl mu/m and consists of 30 turns of a 35 /spl mu/m thick nickel-iron permalloy magnetic core around a 10 /spl mu/m thick sputtered aluminum conductor lines. A specific inductance of 35 nH/mm/sup 2/ is achieved at a frequency of 1 Mhz. Using these two inductors, switched DC/DC boost converters are demonstrated in a hybrid fashion. The obtained maximum output voltage is approximately double an input voltage of 3 V at switching frequencies of 300 kHz and a duty cycle of 50% for both inductors, demonstrating the usefulness of these integrated planar inductors.< > |
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DOI: | 10.1109/APEC.1994.316425 |