A novel high density contactless flash memory array using split-gate sources-side-injection cell for 5 V-only applications

A high density 5 V-only flash memory array with sector erase mode is presented. It features a new triple poly split-gate source-side-injection cell in a contactless array to achieve small cell size, high programming efficiency, high cell current with no over-erase concerns. The array design and its...

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Bibliographic Details
Main Authors: Ma, Y., Pang, C.S., Pathak, J., Tsao, S.C., Chang, C.F., Yamauchi, Y., Yoshimi, M.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Degradation
Delay
Flash memory
Implants
Laboratories
Microelectronics
Nonvolatile memory
Split gate flash memory cells
Very large scale integration
Voltage control
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Summary:A high density 5 V-only flash memory array with sector erase mode is presented. It features a new triple poly split-gate source-side-injection cell in a contactless array to achieve small cell size, high programming efficiency, high cell current with no over-erase concerns. The array design and its operating conditions in various modes are discussed. Various disturb reduction techniques, array performance and speed improvement schemes are presented.< >
DOI:10.1109/VLSIT.1994.324383